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VG112
PCS/UMTS-band Variable Gain Amplifier
Product Features
1800 - 2200 MHz bandwidth 25 dB Gain at 1.9 GHz 28 dB Attenuation Range +46 dBm Output IP3 +30 dBm P1dB Constant IP3 & P1dB over attenuation range * +5V Single voltage supply * Pb-free / green / RoHS-compliant 6x6 mm QFN package * MTTF > 100 years * * * * * *
Product Description
The VG112 is a PCS / UMTS-band high dynamic range variable gain amplifier (VGA) housed in a low profile Pb-free / green / RoHS-compliant surface-mount leadless QFN package that measures 6 x 6 mm square. The +30 dBm output compression point and +46 dBm output intercept point of the amplifier are maintained over the entire attenuation range, making the VG112 ideal for use in transmitter and receiver AGC circuits. The high gain of the dual-stage amplifier allows for more integration in a transceiver board while requiring minimal printed circuit board space. Superior thermal design allows the product to have a minimum MTTF rating of 100 years at a mounting temperature of +85 C. All devices are 100% RF & DC tested and packaged on tape and reel for automated surfacemount assembly.
Functional Diagram
Gain Ctrl GND 7 GND 8 GND 9 GND 10 RF IN 11 GND 12 GND 13 GND 14 15 GND 16 GND 17 GND 18 GND 19 Vbias2 20 GND 21 GND 6 5 4 3 GND 2 Vbias1 1 28 GND 27 Vcc1 26 GND 25 RF OUT / Vcc2 24 GND 23 RF OUT / Vcc2 22 GND GND GND GND
Amp
Variable Attenuator
Applications
* Xmit & Rcv AGC circuitry for mobile infrastructure
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain at min. attenuation Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure at min. attenuation Gain Variation Range Gain Variation Control Voltage, VCTRL Supply Voltage, VCC Operating Amplifier Current Range Gain Control Pin Current
Units
MHz MHz dB dB dB dBm dBm dB dB V V mA mA
Min
1800 20.5
Typ
2140 23 18 8.2 +30 +46 8 28
Max
2200
Conditions
See note 1
+43 23.5 0 350
4.5 +5 415 475 20
See note 2 VCTRL = 0 V See note 3 See note 1 Pin 25 VCTRL = 4.5 V. See note 1.
1. Test conditions unless otherwise noted: 25 C, Vcc = +5 V in a tuned application circuit. Vctrl is the control voltage through a 220 dropping resistor as shown in the same application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 2.14 GHz.
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature Pin 5 (Gain Control) Current Junction Temperature
Rating
-40 to +85 C -55 to +125 C 30 mA +250 C
Ordering Information
Part No.
VG112-G VG112-PCB
Description
PCS/UMTS-band Variable Gain Amplifier
(lead-free/green/RoHS-compliant QFN package)
2140 MHz Fully Assembled Application Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 1 of 5
December 2006
VG112
PCS/UMTS-band Variable Gain Amplifier
2140 MHz Application Circuit Performance
Performance using the circuitry on the VG112-PCB Evaluation Board
Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness
* The center of C5 should be placed 5mm (.197") away from the edge of the VG112. * The input trace is a high impedance line and is needed to get a good input match into the VGA. * The board is optimized for performance at 2140 MHz. Performance at 1960 MHz can be optimized by replacing C5 with 2.7 pF at location A on the WJ VG112 evaluation board.
Bill of Materials Ref. Des. Description C1, C7, C10 47 pF Chip Capacitor C2, C3, C4, 1000 pF Chip Capacitor C8, C9 C5 2.4 pF Chip Capacitor C6 3.3 F Chip Capacitor L1, L2 18 nH Chip Inductor R1 220 Chip Resistor R3 75 Chip Resistor R2, R4 0 Chip Resistor U1 VG112-G VGA
S22 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
Size 0603 0603 0603 0805 0603 0603 0603 0603 QFN 6x6
S21 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
S11 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
28 26 S21 (dB)
S11 (dB)
0
0
-40 C +25 C +85 C
-5
-5 S22 (dB) -10 -15 -20
-40 C +25 C +85 C
24 22 20
-40 C +25 C +85 C
-10 -15 -20 -25 1800
18 1800
1900
2000 Frequency (MHz)
2100
2200
1900
2000 Frequency (MHz)
2100
2200
-25 1800
1900
2000 Frequency (MHz)
2100
2200
S21 vs. Frequency vs. Control Voltage
S11 vs. Frequency vs. Control Voltage
S22 vs. Frequency vs. Control Voltage
30 20 S21 (dB) S11 (dB) 10 0 -10 1800
Vctrl=0.00V Vctrl=1.52V Vctrl=0.73V Vctrl=2.20V Vctrl=1.06V Vctrl=4.50V
0 -5 -10 -15 -20 -25 1800
Vctrl=0.00V Vctrl=1.52V
Vctrl=0.73V Vctrl=2.20V
Vctrl=1.06V Vctrl=4.50V
0 -5 S22 (dB) -10 -15 -20 -25 1800
Vctrl=0.00V Vctrl=1.52V Vctrl=0.73V Vctrl=2.20V Vctrl=1.06V Vctrl=4.50V
1900
2000 Frequency (MHz)
2100
2200
1900
2000 Frequency (MHz)
2100
2200
1900
2000 Frequency (MHz)
2100
2200
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 5 December 2006
VG112
PCS/UMTS-band Variable Gain Amplifier
2140 MHz Application Circuit Performance
OIP3 vs. Output Power vs. Temperature 48 46 OIP3 (dBm) OIP3 (dBm) 44 42 40 +25 C 38 10 12 14 16 18 Output Power per tone (dBm) OIP3 vs. Output Power vs. Temperature 48 46 OIP3 (dBm) 44 42 40 +25 C 38 10 12 14 16 18 Output Power per tone (dBm) 20 -40 C +85 C 38 10 12 14 16 18 Output Power per tone (dBm) 20
frequency = 2140, 2141 MHz, 15dB Atten. frequency = 2140, 2141 MHz, 0dB Atten.
OIP3 vs. Output Power vs. Temperature 48 46 44 42 40 OIP3 (dBm)
frequency = 2140, 2141 MHz, 5dB Atten.
OIP3 vs. Output Power vs. Temperature 48 46 44 42 40
frequency = 2140, 2141 MHz, 10dB Atten.
-40 C
+85 C 38 20 10
+25 C
-40 C
+85 C 38 20 10
+25 C
-40 C
+85 C 20
12 14 16 18 Output Power per tone (dBm) OIP3 vs. Pout vs. Attenuation Setting
frequency = 2140, 2141 MHz, +25 C
12 14 16 18 Output Power per tone (dBm) IMD products vs. Output Power
fundamental frequency = 2140, 2141 MHz; +25 C, 0dB Atten
48 OIP3 (dBm) 46 44 42 40
-40 IMD products (dBc) -50 -60 -70 -80
IMD_Low IMD_High
0 dB Atten 5 dB Atten 10 dB Atten 15 dB Atten
10
12 14 16 18 Output Power per tone (dBm)
20
P1dB vs. Temperature 32 30 P1dB (dBm) 28 26 24 22 -40 Normalized Gain vs. Vctrl
2140 MHz, Vctrl is as shown in the application circuit
ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
frequency = 2140 MHz, 0dB Atten.
-40 -45 -50 -55 -40 C -60 +25 C 21 +85 C 22
ACLR (dBc)
-15
10 35 Temperature (C)
60
85
18
19
20
Output Channel Power (dBm)
Normalized Gain vs. Ictrl
2140 MHz
Ictrl vs. Vctrl
Vctrl is as shown in the application circuit
0 Normalized Gain (dB) -5 -10 -15 -20 -25 -30 0 1 2 Vctrl (V) 3 4 5 Normalized Gain (dB)
0
12
-40 C
+25 C
+85 C
-5 -10 -15 -20 -25 -30 0 2 4
-40 C
+25 C
+85 C
Ictrl (mA)
10 8 6 4 2 0
-40 C
0 1 2 Vctrl (V) 3
+25 C
4
+85 C
5
6
8
10
12
Attenuation Control Current (mA)
Noise Figure vs. Frequency vs. Temperature
Vctrl=0V (Maximum Gain Setting)
Phase vs. Normalized Gain
2140 MHz
10 9
-40 C
+25 C
+85 C
Phase (deg)
20 15 10 5 0 -5 -10
NF (dB)
8 7 6 5 1800
1900
2000 Frequency (MHz)
2100
2200
0
5
10
15
20
25
30
Normalized Gain (dB)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 5 December 2006
VG112
PCS/UMTS-band Variable Gain Amplifier
Application Note: Reduced Bias Configurations
The VG112 can be configured to be operated with lower bias current by varying the bias-adjust resistors - R3 and R4 - which set the current draw for the two stages of the amplifier. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current moderately can be done at the expense of the linearity performance of the device. Measured data is given below and represents the VG112 configured for 2.14 GHz applications. Since the second stage amplifier dominates the current draw of the 2-stage amplifier inside the VG112, modifying R3 will have the greatest effect upon the overall current draw of the device. Data is shown though to display the Icc and performance effects of the device when R4, the bias-adjust resistor for the first-stage amplifier, is modified when R3 is fixed. Performance Data at 2.14 GHz R3 () 75 174 383 787 174 174 174 174 R4 () 0 0 0 0 101 270 499 699 Icq (mA) 436 304 207 155 284 264 251 244 Pdiss (W) 2.18 1.52 1.04 0.78 1.42 1.32 1.26 1.22 Gain OIP3 (dB) (dBm) 24.0 46.3 23.7 42.5 23.3 33.4 22.5 27.7 23.5 42.3 23.3 41.6 23.0 40.2 22.7 38.9 P1dB (dBm) 30.7 30.8 30.9 29.7 30.6 30.4 29.8 29.1
Current vs. R3 Value
450 400 Icc (mA) 350 300 250 200 0 100 200 R3 Value (Ohms) 300 400
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 5 December 2006
VG112
PCS/UMTS-band Variable Gain Amplifier
Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be lasermarked with a "VG112-G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101
Mounting Configuration / Land Pattern
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Functional Pin Layout
Gain Ctrl GND 7 GND 8 GND 9 GND 10 RF IN 11 GND 12 GND 13 GND 14 15 GND 16 GND 17 GND 18 GND 19 Vbias2 20 GND 21 GND 6 GND 2 5 4 3 Vbias1 1 28 GND 27 Vcc1 26 GND 25 RF OUT / Vcc2 24 GND RF OUT / 23 Vcc2 22 GND GND GND GND
Amp
Variable Attenuator
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2)
Rating
-40 to +85 C 33 C / W 151 C
Pin No 1 5 11 19 23, 25 27 Even numbered pins and backside paddle 3, 7, 9, 13, 15, 17, 21
Function Vbias1 Gain Control RF Input Vbias2 RF Output / Vcc2 Vcc1 Ground No connect or ground
Notes: 1. The thermal resistance is referenced from the hottest part of the junction to the backside paddle. 2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 5 December 2006

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